Product description

Micron RAM memory is single rank, eight banks, On-Die Termination (ODT), Serial Presence Detect (SPD), buffered. Upgrade type: Generic. Data integrity check: Non-ECC. Latency timings: CL19 (19-19-19). 288-pin, buffered dual in-line memory module (UDIMM). High-speed DDR4 SDRAM modules use DDR4 SDRAM devices with two or four internal memory bank groups. DDR4 SDRAM modules utilizing 4- and 8-bit-wide DDR4 SDRAM devices have four internal bank groups consisting of four memory banks each, providing a total of 16 banks. 16-bit-wide DDR4 SDRAM devices have two internal bank groups consisting of four memory banks each, providing a total of eight banks. DDR4 SDRAM modules benefit from DDR4 SDRAM's use of an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single READ or WRITE operation for the DDR4 SDRAM effectively consists of a single 8n-bitwide, four-clock data transfer at the internal DRAM core and eight corresponding n-bitwise, one-half-clock-cycle data transfers at the I/O pins.

Technical Details